This document describes the features and characteristics of the FQA28N15 N-Channel MOSFET product. The product is produced using Fairchild's proprietary DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching for DC/DC converters, DC motor control, and uninterrupted power supply.
This document is a datasheet for the Fairchild Semiconductor FQA28N15, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is well-suited for applications such as audio amplifiers, high efficiency switching for DC/DC converters, and DC motor control.
| Drain-Source Voltage | 150 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 33 A |
| Maximum Junction Temperature | 175°C |
| Package Type | TO-3PN |
| On-Resistance (Typical) | 0.092 Ohms |
| Gate Charge (Typical) | 40 nC |
The maximum junction temperature rating is 175°C.
The maximum drain-source voltage is 150 V.