This document is an introduction to the FQA140N10 QFET QFET QFET QFET TM FQA140N10 100V N-Channel MOSFET produced by Fairchild Semiconductor International. This product is manufactured using Fairchild's proprietary DMOS technology and features low on-state resistance, superior switching performance, and high energy pulse tolerance. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
This document is a datasheet for the Fairchild FQA140N10, a 100V N-Channel enhancement mode power field effect transistor. Produced using Fairchild's proprietary planar stripe, DMOS technology, the device is designed to minimize on-state resistance and provide superior switching performance. It is well-suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
The datasheet provides absolute maximum ratings, electrical characteristics, typical characteristics graphs, and mechanical dimensions. Key specifications include a continuous drain current of 140A at 25°C, a maximum junction temperature of 175°C, and a package type of TO-3PN. The document also includes test circuit diagrams and trademark information.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 140 A |
| Maximum Junction Temperature | 175°C |
| Package Type | TO-3PN |
| On-Resistance (Typical) | 0.019 @Vgg = 10 V |
| Gate Charge (Typical) | 220 nC |
| Power Dissipation (Tj = 25°C) | 375 W |
The maximum junction temperature rating is 175°C.
The package type is TO-3PN.
Yes, the device is 100% avalanche tested.