The FQA13N50CF is a 500V N-channel MOSFET from Fairchild with a 15A rating, 0.48 ohm RDS(on) and 43nC gate charge. This device is made using Fairchild's proprietary planar stripe DMOS technology and features a low on-resistance, high switching speed and a fast-recovery body diode. It is well-suited for high efficiency switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology.
This document is a datasheet for the Fairchild Semiconductor FQA13N50CF, a 500V N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for applications such as high efficient switched mode power supplies, active power factor correction, and electronic lamp ballasts.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 15 A |
| Package Type | TO-3PN |
| Total Gate Charge (Typical) | 43 nC |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 0.58 °C/W |
The device supports a continuous current of 15 A at a case temperature of 25°C and 9.5 A at 100°C.
The component can withstand a single pulsed avalanche energy of up to 860 mJ.
The device has a peak diode recovery dv/dt capability of 45 V/ns.