The document describes the features and characteristics of the 2N7002MTF product, including lower RDS(on), improved inductive ruggedness, fast switching times, lower input capacitance, extended safe operating area, and improved high temperature reliability.
This document is a technical datasheet for the Fairchild Semiconductor 2N7002MTF, an Advanced Small Signal MOSFET. The device features lower input capacitance, improved inductive ruggedness, fast switching times, and extended safe operating area capabilities.
The datasheet provides absolute maximum ratings, electrical characteristics at 25°C, and typical performance curves including output characteristics, transfer characteristics, on-resistance versus drain current, and source-drain diode forward voltage.
| Drain-to-Source Voltage (BVdss) | 60 V |
|---|---|
| Continuous Drain Current (Ta=25°C) | 115 mA |
| Low Drain Current-Pulsed | 800 mA |
| Gate-Source Voltage (Vgs) | +20 Vv |
| Total Power Dissipation (Ta=25°C) | 0.2 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The gate threshold voltage ranges from a minimum of 1.0 V to a maximum of 2.5 V.