FQA160N08 is a 80V N-channel MOSFET produced by Fairchild Semiconductor International. It features low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.
The document describes the Fairchild FQA160N08, a high-performance N-Channel enhancement mode power field effect transistor. Produced using Fairchild's proprietary planar stripe, DMOS technology, this device is designed to minimize on-state resistance and provide superior switching performance for applications such as automotive systems, DC/DC converters, and motor control.
| Drain-Source Voltage | 80 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 160 A |
| Pulsed Drain Current | 640 A |
| On-Resistance (Typical) | 0.0072 Ohm |
The maximum continuous drain current at Tj = 25°C is 160 A.
The device has a maximum junction temperature rating of 175°C.