This document introduces the FDS6680A model of N-channel logic level MOSFET produced by Fairchild Semiconductor. The device is produced using advanced power trench process to minimize on-state resistance and maintain superior switching performance. It is suitable for low voltage and battery powered applications requiring low in-line power loss and fast switching.
The document describes the Fairchild Semiconductor FDS6680A, a single N-Channel Logic Level PowerTrench MOSFET. It is designed using advanced PowerTrench process technology to minimize on-state resistance while maintaining superior switching performance for low voltage and battery-powered applications.
Key specifications include a drain-source breakdown voltage of 30V, a continuous drain current of 12.5A, and an ultra-low gate charge. The datasheet details absolute maximum ratings, electrical characteristics such as capacitance and transconductance, and typical performance graphs including on-resistance variation with temperature and gate charge characteristics.
| Drain-Source Voltage (V_DSS) | 30 V |
|---|---|
| Operating Junction Temperature Range | -55 to +150 °C |
| Static Drain-Source On-Resistance (V_GS=10V) | 9.5 mΩ |
| Gate Threshold Voltage (Min) | 1 V |
The device supports a continuous drain current of 12.5 A.
The operating and storage junction temperature range extends to +150 °C.