FDS89161LZ is a dual N-channel PowerTrench® MOSFET produced by Fairchild Semiconductor. It has extremely low on-state resistance (rDS(on)) and can be used in DC-DC conversion circuits.
The document describes the Fairchild Semiconductor FDS89161LZ, a Dual N-Channel PowerTrench MOSFET designed for DC-DC conversion applications. It features an extremely low on-state resistance of 105 mΩ and is available in a widely used surface mount package.
Key electrical characteristics include a maximum drain to source voltage of 100V and a continuous drain current rating of 2.7A. The device incorporates G-S zener protection for enhanced ESD performance and is RoHS compliant.
| Drain to Source Voltage (VDS) | 100 V |
|---|---|
| Gate to Source Voltage (VGS) | +20 V |
| Continuous Drain Current | 2.7 A |
| Pulsed Drain Current | 15 A |
| Power Dissipation (Ta = 25°C) | 3.1 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 2.7 A.
The operating and storage junction temperature range is -55 to +150 °C.