FDS89161 is a dual N-channel PowerTrench® MOSFET from Fairchild Semiconductor that has extremely low RDS(on), high power and current handling capability, and is suitable for use in synchronous rectifiers and primary switches for bridge topologies.
This document is a technical datasheet for the Fairchild Semiconductor FDS89161, a dual N-Channel PowerTrench MOSFET designed for high performance and ruggedness. The device features extremely low on-resistance (Rds(on)) utilizing advanced trench technology.
The datasheet provides comprehensive electrical characteristics, including maximum ratings, off and on characteristics, dynamic parameters such as capacitance and gate charge, and switching times. It also includes typical characteristic curves illustrating on-region behavior, transfer characteristics, and thermal response under various conditions.
| Drain to Source Voltage (Vdss) | 100 V |
|---|---|
| Continuous Drain Current (Id) | 2.7 A |
| Power Dissipation (Ta = 25°C) | 31 W |
| Static Drain to Source On Resistance (Vgs=10V, Id=2.7A) | 105 mΩ |
It is suitable for use as a synchronous rectifier or as a primary switch in bridge topology circuits.
Yes, the device is stated to be RoHS Compliant.