This document describes the FDS8958B Dual N & P-Channel PowerTrench® MOSFET released in December 2008. The product is well suited for low voltage and battery powered applications, featuring low on-state resistance and fast switching performance.
This document is a technical datasheet for the Fairchild Semiconductor FDS8958B, which integrates an N-Channel and a P-Channel enhancement mode power field-effect transistor (MOSFET) in a single package. The device utilizes Fairchild's PowerTrench process to minimize on-state resistance while maintaining superior switching performance.
The datasheet provides comprehensive electrical characteristics for both the N-channel (Q1) and P-channel (Q2) sections, including maximum ratings, off/on characteristics, dynamic parameters, and thermal data. It also includes typical characteristic curves illustrating performance under various conditions such as junction temperature and gate voltage.
| Drain to Source Voltage (VDS) | 30 V / -30 V |
|---|---|
| Continuous Drain Current (Q1 N-Channel) | 6.4 A |
| Continuous Drain Current (Q2 P-Channel) | -4.5 A |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current for the N-channel (Q1) at Ta = 25°C is 6.4 A.
The FDS8958B is well suited for DC-DC conversion, BLU (backlight unit) drives, and motor drive inverters.
Yes, the device is listed as RoHS Compliant on the features page.