This document describes the features and characteristics of the FDS8935 Dual P-Channel PowerTrench® MOSFET, including maximum on-resistance, high-performance trench technology, high power and current handling capability. It is suitable for load switch and synchronous rectifier applications.
The document details the specifications for the FDS8935, a dual P-channel MOSFET utilizing Fairchild's PowerTrench technology. Key features include a maximum drain-to-source voltage of -80 V and a continuous drain current of 2.1 A. The device is designed for applications such as load switches and synchronous rectifiers.
Yes, the datasheet states that the product is RoHS Compliant.
The device supports a continuous drain current of 2.1 A.
The maximum power dissipation is 3.1 W when the ambient temperature is 25°C.
The device operates and stores within a temperature range of -55 to +150 °C.