The FDS89141 is a dual N-channel power transistor produced by Fairchild Semiconductor Corporation. It has a maximum on-resistance of 62 mΩ and a maximum current of 3.5 A. The device uses Fairchild Semiconductor's advanced Power Trench® process, which provides extremely low on-resistance, high power and current handling capability, and is widely used in synchronous rectifier and bridge topology applications.
This document is a technical datasheet for the Fairchild Semiconductor FDS89141, a Dual N-Channel PowerTrench® MOSFET. The device features high performance trench technology optimized for switching performance and ruggedness.
Key specifications include a maximum drain to source voltage of 100 V and a continuous drain current of 3.5 A. It is available in an SO-8 surface mount package and is RoHS Compliant.
| Drain to Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (ID) | 3.5 A |
| Power Dissipation (Ta = 25°C) | 31 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Package Type | SO-8 |
It is suitable for use as a synchronous rectifier or as a primary switch for bridge topology.
Yes, the device is RoHS Compliant.