The datasheet provides the characteristics of FDS8962C Dual N & P-Channel PowerTrench ® MOSFET, including rated voltage, current, power, temperature, etc.
The document describes the Fairchild FDS8962C, a dual N- and P-channel enhancement mode power field-effect transistor produced using the PowerTrench process. It is designed for low voltage and battery-powered applications requiring low in-line power loss and fast switching speeds.
The datasheet provides absolute maximum ratings, electrical characteristics including on-resistance and breakdown voltages, and dynamic parameters such as capacitance and gate charge. It also includes typical characteristic curves illustrating performance under various conditions like temperature changes and different drain currents.
| Drain-Source Voltage | +30 / -30 V |
|---|---|
| Power Dissipation (Dual Operation) | 2 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The device uses a widely used surface mount package.
Yes, it is well suited for low voltage and battery powered applications.