This document describes the features and characteristics of the FDS8928A dual N and P-channel enhancement mode field effect transistor produced in July 1998. These transistors are made using Fairchild's proprietary high cell density DMOS technology, which offers low on-state resistance, superior switching performance, and resistance to transients. They are particularly suitable for low voltage applications, such as notebook computer power management and battery powered circuits.
This document is a technical datasheet for the Fairchild Semiconductor FDS8928A, which consists of dual N- and P-Channel enhancement mode power field effect transistors. The device utilizes proprietary high cell density DMOS technology to minimize on-state resistance and provide superior switching performance.
The FDS8928A is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. It is available in surface mount packages including SOT-23, SuperSOT™-6, and SuperSOT™-8.
| N-Channel Drain Current (Continuous) | 5.5 A |
|---|---|
| P-Channel Drain Current (Continuous) | -4 A |
| N-Channel Drain-Source Voltage | 30 V |
| P-Channel Drain-Source Voltage | -20 V |
| N-Channel On-State Resistance (Typical) | 0.030 Ω @ Vgs=4.5V |
| P-Channel On-State Resistance (Typical) | 0.055 Ω @ Vgs=-4.5V |
| Power Dissipation for Dual Operation | 2 W |
| Operating Temperature Range | -55 to 150 °C |
The device is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits.
The device is available in SOT-23, SuperSOT™-6, and SuperSOT™-8 surface mount packages.
Yes, it is a Dual (N & P-Channel) MOSFET in surface mount package.