The FDS8949 is a dual N-channel logic level PowerTrench® MOSFET produced by Fairchild Semiconductor. It features extremely low on-state resistance and excellent switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
The FDS8949 is a dual N-channel logic level MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process. It is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for low voltage and battery-powered applications requiring low in-line power loss and fast switching.
Key specifications include a maximum drain to source voltage of 40V, a continuous drain current of 6A, and a maximum on-resistance of 29mΩ at Vgs = 10V. The device operates within a junction temperature range of -55°C to 150°C and is RoHS compliant.
| Pulsed Drain Current | 20 A |
|---|---|
| Total Gate Charge | 11 nC |
The device is well suited for inverter and power supplier applications.
Yes, the FDS8949 is RoHS compliant.