This document describes the features and characteristics of the FDS6675BZ P-Channel PowerTrench® MOSFET product released in March 2009. This product is suitable for power management and load switching applications such as notebook computers and portable battery packs.
This document is a datasheet for the Fairchild Semiconductor FDS6675BZ, a P-Channel PowerTrench MOSFET designed for power management and load switching applications. The device features a maximum drain-to-source voltage of -30V and a continuous drain current of -11A.
| Drain to Source Voltage | -30 V |
|---|---|
| Gate to Source Voltage | ±25 V |
| Continuous Drain Current | -11A |
| Operating Temperature | -55 to 150 °C |
| Drain to Source On Resistance | 13m Ω |
The maximum continuous drain current is -11A.
The device operates and stores between -55°C and 150°C.
Yes, the datasheet states the product is RoHS Compliant.