This document describes the features and characteristics of Fairchild Semiconductor's FDS4685 40V P-Channel PowerTrench® MOSFET, including high-performance trench technology, fast switching speed, and high power and current handling capability. The product is suitable for power management, load switch, and battery protection applications.
This document is a technical datasheet for the Fairchild Semiconductor FDS4685, a 40V P-Channel PowerTrench MOSFET. The device features high power handling capability and fast switching speed, optimized for power management applications such as load switches and battery protection.
| Drain-Source Voltage | -40 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | -8.2 A |
| Power Dissipation (Single Operation) | 25 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The device is optimized for power management applications requiring a wide range of gate drive voltage ratings from 4.5V to 20V.
The device supports a continuous drain current of -8.2 A at a junction temperature of 25°C.