This document describes the features and characteristics of the FDS4897AC Dual N & P-Channel PowerTrench® MOSFET product released in October 2008.
The FDS4897AC is a dual N- and P-Channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process. It is designed to minimize on-state resistance while maintaining superior switching performance. The device features an N-Channel with a maximum drain current of 6.1 A and a P-Channel with a maximum drain current of -5.2 A.
| Drain to Source Voltage (N-Channel) | 40 V |
|---|---|
| Continuous Drain Current (N-Channel) | 6.1 A |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
The device is suitable for use in inverters and power supplies.
Yes, the device is RoHS compliant.
The maximum power dissipation for dual operation is 2.0 W.