This document introduces Fairchild Semiconductor's FDS4935A Dual 30V P-Channel PowerTrench MOSFET. It is based on the advanced PowerTrench process and is suitable for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V). It features low on-resistance, low gate charge, fast switching speed, and high power and current handling capability.
The FDS4935A is a rugged P-Channel MOSFET utilizing Fairchild Semiconductor's advanced PowerTrench process. It is optimized for power management applications requiring a wide range of gate drive voltage ratings from 4.5V to 20V. Key features include a low gate charge of 15nC typical, fast switching speed, and high performance trench technology for extremely low on-resistance.
| Drain-Source Voltage | -30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | 7 A |
| Power Dissipation (Dual) | 2 W |
| Power Dissipation (Single) | 1.6 W |
| Operating Junction Temperature | -55 to +175 °C |
| Thermal Resistance (Junction-to-Ambient) | 78 °C/W |
| Thermal Resistance (Junction-to-Case) | 40 °C/W |
| Gate Charge | 15 nC typical |
The device is optimized for power management applications and load switch applications.
The typical gate charge is 15nC.
The operating and storage junction temperature range is -55 to +175 °C.