APT12045L2VR is a 1200V 26A 0.450� N-Channel Enhancement Mode Power MOSFET.
This document provides a datasheet for the Advanced APT12045L2VR, a high voltage N-Channel enhancement mode power MOSFET. The device features a new Power MOS V® technology designed to minimize the JFET effect, increase packing density, and reduce on-resistance while achieving faster switching speeds.
The datasheet details maximum ratings, static electrical characteristics, dynamic characteristics, and thermal characteristics. It specifies a drain-source voltage of 1200 Volts, a continuous drain current of 26 Amps, and a drain-source on-state resistance of 0.450 Ohms. The document also includes package outline dimensions for the TO-264 MAX™(L2) package.
| Drain-Source Voltage | 1200 Volts |
|---|---|
| Continuous Drain Current | 26 Amps |
| Total Power Dissipation | 830 Watts |
| Operating Junction Temperature Range | -55 to 150 °C |
| Package Type | TO-264 MAX |
The device supports a continuous drain current of 26 Amps when the temperature is 25°C.
The total power dissipation is rated at 830 Watts when the ambient temperature is 25°C.
The device can operate within a junction temperature range of -55 to 150 °C.