Advanced APT12031JLL Power MOSFET Datasheet

This is a technical datasheet for a 1200V 30A Schottky diode.

Brand: Advanced
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 2
File format: PDF
File size: 70 KB
Published: 12 July, 2012
Updated: 01 October, 2023
MD5 checksum: A38324FB916AC21FC0D818F125983D1B
PDF: Advanced APT12031JLL Power MOSFET Datasheet PDF

About this manual

This document provides a datasheet for the Advanced APT12031JLL, a 1200V 30A N-Channel enhancement mode Power MOSFET. It features the Power MOS 7™ technology with a patented metal gate structure designed for low loss and fast switching speeds. The device is housed in a popular SOT-227 (IsoTOP®) package.

What's inside

Maximum Ratings
Static Electrical Characteristics
Dynamic Characteristics
Source-Drain Diode Ratings
Thermal Characteristics
Package Outline

Specifications

Drain-Source Voltage	1200 Volts
Continuous Drain Current	30 Amps
Pulsed Drain Current	120 Amps
Total Power Dissipation	690 Watts
Operating Junction Temperature Range	-55 to 150 C
Drain-Source On-State Resistance	0.310 Ohms
Package Type	SOT-227

Frequently asked questions

What is the maximum continuous drain current for the APT12031JLL at 25°C?

The maximum continuous drain current is 30 Amps when the temperature is 25°C.

What is the maximum total power dissipation rating?

The total power dissipation is rated at 690 Watts when the case temperature is 25°C.

What is the operating and storage junction temperature range?

The device operates and stores within a junction temperature range of -55 to 150 C.

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