The document is about GDS SOT-227 GSSD ISOTOP, a product with UL recognition. It is known for its high safety and excellent performance.
This document provides technical specifications for the APT12040JVR, a high voltage N-Channel enhancement mode power MOSFET from Advanced Power Technology. The device utilizes a new Power MOS V® technology designed to minimize the JFET effect, increase packing density, and reduce on-resistance while achieving faster switching speeds.
| Drain-Source Voltage | 1200 Volts |
|---|---|
| Continuous Drain Current | 26 Amps |
| Package Type | SOT-227 |
| Total Power Dissipation | 700 Watts |
| Operating Junction Temperature | -55 to 150 °C |
| Drain-Source On-State Resistance | 0.400 Ohms |
The APT12040JVR supports a continuous drain current of 26 Amps when the junction temperature is 25°C.
The device has a maximum drain-source voltage rating of 1200 Volts.
The maximum torque for device mounting screws and electrical terminations is 13 Ibsin.