This datasheet is the technical parameters of APT12040L2LL MOSFET.
This document describes the APT12040L2LL, a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS from Advanced Power Technology. The device features significantly lowered conduction and switching losses along with exceptionally fast switching speeds inherent to the company's patented metal gate structure.
The datasheet provides maximum ratings, static electrical characteristics, dynamic characteristics, source-drain diode ratings, thermal characteristics, and a package outline for the TO-264 MAX (L2) package.
| Drain-Source Voltage | 1200 Volts |
|---|---|
| Continuous Drain Current | 30 Amps |
| Total Power Dissipation | 890 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance | 0.400 Ohms |
| Package Type | TO-264 MAX |
The continuous gate-source voltage rating is +30 Volts, with a transient limit of +40 Volts.
The typical reverse recovery time (trr) for the body diode is 1250 nanoseconds.