APT100GN120J is a high voltage IGBT, rated voltage is 1200V, rated current is 100A. It has ultra low VCE(ON) and is ideal for low frequency applications that require absolute zero voltage turn off.
This document is a technical datasheet for the APT100GN120J, an Insulated Gate Bipolar Transistor (IGBT) utilizing Field Stop and Trench Gate technologies. It highlights features such as ultra-low collector-emitter on-voltage ($V_{CE(on)}$), easy paralleling due to tight parameter distribution, and a built-in gate resistor for high reliability during short circuit faults.
The datasheet provides comprehensive electrical characteristics, including maximum ratings, static and dynamic parameters, thermal properties, and mechanical specifications. It also includes typical performance curves illustrating output characteristics, transfer characteristics, switching energies, and transient thermal impedance.
| Integrated Gate Resistor Value | 7.5 Ω |
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The device has a maximum collector-emitter voltage of 1200 Volts.
The total power dissipation must not exceed 446 Watts.