The document describes the characteristics and test conditions of a specific product, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, gate-source leakage current, and gate threshold voltage.
This document is a datasheet for the APT10050JLC, a low gate charge, high voltage N-Channel enhancement mode power MOSFET. The device is designed for fast switching speeds and is available in the SOT-227 (ISOTOP) package. It features a 1000V drain-source voltage rating and a continuous drain current of 19A at 25°C.
| Package Type | SOT-227 (ISOTOP) |
|---|---|
| Operating Junction Temperature Range | -55 to 150 C |
| Total Power Dissipation | 450 Watts |
The device features a new generation of low gate charge.
Yes, the device is 100% avalanche tested.