APT10050JN is a power MOSFET from ISOTOP company. Its features are a maximum voltage of 1000V, a maximum current of 50A, and a maximum power of 500W.
This document is a technical datasheet for the APT10050JN, an N-Channel Enhancement Mode High Voltage Power MOSFET manufactured by Advanced Power Technology Europe. The device features a maximum drain-source voltage of 1000 Volts and a continuous drain current of 20.5 Amps at Tc = 25°C.
The datasheet provides comprehensive electrical characteristics, including static parameters like on-state resistance (Rds(ON)) of 0.50 Ohms and dynamic characteristics such as input capacitance and gate charge. It also details thermal ratings, package specifications for the ISOTOP® SOT-227 package, and includes typical performance curves for output, transfer, and safe operating areas.
| Drain-Source Voltage (Vdss) | 1000 Volts |
|---|---|
| Continuous Drain Current (Id) | 20.5 Amps |
| Total Power Dissipation (Pd) | 520 Watts |
| Operating Junction Temperature Range | -55 to 150 °C |
| Drain-Source On-State Resistance (Rds(ON)) | 0.50 Ohms |
| Package Type | ISOTOP® SOT-227 |
The device supports a maximum drain-source voltage of 1000 Volts and a continuous drain current of 20.5 Amps at a case temperature of 25°C.
The maximum total power dissipation is rated at 520 Watts when the case temperature is maintained at 25°C.