APT10050B2VR is a power transistor produced by Texas Instruments. It has a rated voltage of 1000V, a rated current of 21A, a drain-source resistance of 0.500Ω, a rated power of 21W, and a temperature range of -55°C to 150°C.
This document is a datasheet for the APT10050B2VR, a high voltage N-Channel enhancement mode power MOSFET from Advanced Power Technology. The device utilizes Power MOS V® technology to minimize the JFET effect, increase packing density, and reduce on-resistance while achieving faster switching speeds.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 21 Amps |
| Pulsed Drain Current | 84 Amps |
| Gate-Source Voltage (Continuous) | +30 Volts |
| Total Power Dissipation | 520 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Package Type | T-MAX™ Package G (Clip-mounted TO-247 Package) |
The maximum drain-source voltage is 1000 Volts.
The continuous drain current at 25°C is 21 Amps.