This data table is for the static electrical characteristics of APT10025JVFR
This document is a datasheet for the APT10025JVFR, a high voltage N-Channel enhancement mode Power MOSFET from Advanced Power Technology. The device utilizes Power MOS V® technology to minimize the JFET effect and reduce on-resistance. It features a fast recovery body diode and is available in the SOT-227 (ISOTOP®) package.
The datasheet provides maximum ratings, static electrical characteristics, dynamic characteristics, and thermal/package specifications. It includes typical output characteristics, transfer characteristics, and safe operating area graphs to assist in circuit design and application.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 34 Amps |
| Total Power Dissipation | 700 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Package Type | SOT-227 |
The maximum continuous drain current is 34 Amps when the temperature is 25°C.
The total power dissipation is 700 Watts at a temperature of 25°C.
The maximum torque for device mounting screws is 13 lbsin.