The document describes a power MOSFET product with high voltage, high current, and low resistance characteristics. It has a breakdown voltage of up to 1000V between drain and source, a maximum on-state drain current of 34A, and an on-state drain-source resistance of 0.25Ω. The product also has low zero gate voltage and drain current, as well as a high gate-source threshold voltage.
This document describes the APT10025JLC, a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. The device features Power MOS VI™ technology which optimizes manufacturing to minimize capacitance and delivers exceptionally fast switching speeds.
The datasheet provides maximum ratings, static electrical characteristics, dynamic characteristics, source-drain diode ratings, thermal characteristics, and package outline dimensions for the SOT-227 (ISOTOP®) package.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current @ Tg = 25°C | 34 Amps |
| Pulsed Drain Current | 136 Amps |
| Gate-Source Voltage Continuous | +30 Volts |
| Total Power Dissipation @ Tc = 25°C | 700 Watts |
| Operating and Storage Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance @ Veg = 10V, 0.5 larcont) | 0.250 Ohms |
| Package Type | SOT-227 (ISOTOP®) |
The Drain-Source Breakdown Voltage (BVpgg) is 1000 Volts.
The Gate Threshold Voltage ranges from a minimum of 3 Volts to a maximum of 5 Volts.
The Reverse Recovery Time is typically 1300 ns under specified test conditions.