This file is about the technical information of APT10021JLL, including its maximum ratings and static electrical characteristics
This document is a datasheet for the Advanced APT10021JLL, a new generation of low loss, high voltage N-Channel enhancement mode Power MOSFETs. The device features a patented metal gate structure designed to lower conduction and switching losses while providing exceptionally fast switching speeds.
| Package Type | SOT-227 |
|---|
The maximum continuous drain current is 37 Amps when the temperature is 25°C.
The device can dissipate a maximum of 690 Watts at a case temperature of 25°C.
The operating and storage junction temperature range is from -55 to 150 C.