The document describes a product with the following features and characteristics: 1. Drain-source breakdown voltage; 2. On-state drain current; 3. Drain-source on-state resistance; 4. Zero gate voltage drain current; 5. Gate-source leakage current; 6. Gate threshold voltage.
This document provides technical specifications and characteristics for the APT10021JFLL Power MOSFET. The device is an N-Channel enhancement mode component designed with Advanced Power Technology's patented Power MOS 7™ structure to minimize conduction and switching losses.
The datasheet details maximum ratings, static electrical characteristics such as drain-source breakdown voltage and on-state resistance, dynamic characteristics including capacitance and gate charge, source-drain diode performance, thermal properties, and package dimensions.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 37 Amps |
| Pulsed Drain Current | 148 Amps |
| Total Power Dissipation | 690 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance | 0.210 Ohms |
| Package Type | SOT-227 |
The device supports a continuous drain current of 37 Amps when the junction temperature is maintained at 25°C.
The APT10021JFLL can dissipate a maximum of 690 Watts when the case temperature is 25°C.
The device is rated for an operating and storage junction temperature range from -55 to 150 C.