This is a datasheet for the APT1001RSVR Schottky diode. The maximum voltage for this diode is 1000V, the maximum current is 11A, and the maximum resistance is 1.000Ω.
This document provides technical specifications and characteristics for the APT1001RSVR, a high voltage N-Channel enhancement mode power MOSFET. The device features 1000V drain-source voltage capability and is available in a D°PAK package.
The datasheet details maximum ratings, static electrical characteristics, dynamic parameters such as capacitance and switching times, and thermal properties including junction-to-case resistance. It also includes typical performance graphs for output, transfer, and safe operating areas.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 11 Amps |
| Pulsed Drain Current | 44 Amps |
| Total Power Dissipation | 280 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance | 1.00 Ohms |
| Package Type | D°PAK Package |
The maximum drain-source voltage (Voss) is 1000 Volts.
The continuous drain current (Ib) is 11 Amps when Tg = 25°C.
The drain-source on-state resistance (Rds(on)) is typically 1.00 Ohms at Vgs=10V.