APT1001RBVR is a high voltage N-channel enhancement mode power MOSFET from Power MOS V® series. It features low voltage drop and small package.
This document provides technical specifications for the Advanced APT1001RBVR, a high voltage N-Channel enhancement mode power MOSFET. The device features a new Power MOS V® technology designed to minimize the JFET effect, increase packing density, and reduce on-resistance. It is available in a popular TO-247 package and includes 100% avalanche testing.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 11 Amps |
| Pulsed Drain Current | 44 Amps |
| Total Power Dissipation | 280 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance | 1.00 Ohms |
| Package Type | TO-247 |
The maximum drain-source voltage is 1000 Volts.
The continuous drain current at 25°C is 11 Amps.
The operating and storage junction temperature range is -55 to 150°C.