This datasheet is for the APT1001RBN. It contains information on the voltage, current, and other parameters of the product, as well as maximum operating temperature.
This document is a datasheet for the APT1001RBN, an N-channel enhancement mode high voltage power MOSFET manufactured by Advanced Power Technology. It provides maximum ratings, static and dynamic electrical characteristics, and thermal data for the device.
The datasheet includes detailed specifications such as a drain-source voltage of 1000V and a continuous drain current of 11A. It also features graphical representations of typical output characteristics, transfer characteristics, and safe operating area curves to assist in circuit design.
The device supports a continuous drain current of 11 Amps when the temperature is 25°C.
The part has a maximum drain-source voltage rating of 1000 Volts.
The device operates and stores within a junction temperature range of -55 to 150 °C.