The document describes the features and characteristics of a N-channel enhancement mode power MOSFET product, including its voltage, current, resistance, temperature characteristics, and thermal characteristics.
This document is a datasheet for the APT1001R6BN, an N-channel enhancement mode high voltage power MOSFET manufactured by Advanced Power Technology. It provides maximum ratings, static and dynamic electrical characteristics, and thermal data for the device.
The device is available in a TO-247AD package.
The device supports a continuous drain current of 8 Amps when the temperature is 25°C.
The maximum drain-source voltage rating for this part is 1000 Volts.
The total power dissipation is rated at 240 Watts when the case temperature is 25°C.