Advanced Power Technology APT1001R1SN N-Channel Enhancement Mode High Voltage Power MOSFET Datasheet

About this manual

This document is a technical datasheet for the APT1001R1SN, an N-Channel Enhancement Mode High Voltage Power MOSFET manufactured by Advanced Power Technology. The device features a drain-source breakdown voltage of 1000V and a continuous drain current rating of 10.5A at Tj = 25°C.

The datasheet provides comprehensive static electrical characteristics, including on-state resistance (Rds(ON)) of 1.10 Ohms typical, gate threshold voltage, and various leakage currents. It also details dynamic characteristics such as input/output capacitance, total gate charge, and switching times for turn-on and turn-off delays.

What's inside

• Maximum Ratings
• Static Electrical Characteristics
• Thermal Characteristics
• Dynamic Characteristics
• Source-Drain Diode Ratings
• Safe Operating Area Characteristics
• Typical Output Characteristics
• Package Outline

Frequently asked questions

What is the maximum continuous drain current for this MOSFET at 25°C?

The maximum continuous drain current is 10.5 Amps when the temperature is 25°C.

What is the maximum total power dissipation rating?

The total power dissipation is rated at 310 Watts when the temperature is 25°C.

What is the operating and storage junction temperature range?

The device operates and stores within a junction temperature range of -55 to 150 °C.