This document describes the features and characteristics of FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, including RDS(on), low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability, etc.
This document is a datasheet for the Fairchild FDP6N60ZU and FDPF6N60ZUT N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology and are designed for high-efficiency switched mode power supplies and active power factor correction applications. The FDPF6N60ZUT variant features a TO-220F potted package, while the FDP6N60ZU is in a standard TO-220 package.
| Drain to Source Voltage | 600 V |
|---|---|
| Drain Current (Continuous, TC = 25°C) | 4.5 A |
| On-State Resistance (Typical) | 1.7 Ω |
| Operating Temperature Range | -55 to +150°C |
| Package Type | TO-220 / TO-220F |
The maximum continuous drain current at TC = 25°C is 4.5 A.
The typical on-state resistance is 1.7 Ω at VGS = 10V and ID = 2.25A.
Yes, the device is RoHS compliant.