FDP8N50NZF/FDPF8N50NZF N-Channel MOSFET is produced by Fairchild using its proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance, high energy pulse, and is suitable for high-efficiency switching power supplies and active power factor correction.
This document is a technical datasheet for the Fairchild Semiconductor FDP8N50NZF and FDPF8N50NZF N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe DMOS technology to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability.
| Drain to Source Voltage (VDSS) | 500 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 7 A |
| On-State Resistance (RDS(on)) | 0.85 Ω (Typ.) @ VGS = 10V, ID = 3.25A |
| Total Gate Charge (Qg) | Typ. 14nC |
| Reverse Transfer Capacitance (Crss) | Typ. 5pF |
The operating and storage temperature range is -55 to +150°C.
Yes, the devices are stated as RoHS Compliant.