FDMB3800N is a dual N-channel power MOSFET produced by Fairchild Semiconductor Corporation. It features low on-state resistance, high switching speed, low gate charge, etc.
This document is a technical datasheet for the Fairchild Semiconductor FDMB3800N, a Dual N-Channel PowerTrench MOSFET. The device features a maximum drain current of 4.8A and an on-state resistance (Rds(on)) of 40mΩ at Vgs=10V.
| Drain to Source Voltage (Vdss) | 30 V |
|---|---|
| On-Resistance (Rds(on)) at Vgs=10V | 40 mΩ |
| Power Dissipation (Ta=25°C) | 1.6 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 4.8 A when the ambient temperature is 25°C.
The power dissipation is 1.6 W when mounted on a 1in² pad of 2 oz copper at 25°C.
The maximum drain-to-source voltage rating is 30 V.