FDMA510PZ is a single P-channel PowerTrench® MOSFET with a maximum drain-source voltage of –20V, a maximum drain-source current of –7.8A and a maximum on-state resistance of 30mΩ. It features low power consumption, high withstand voltage, high switching speed and is suitable for battery charging or load switching applications.
The document describes the Fairchild FDMA510PZ, a Single P-Channel PowerTrench MOSFET designed specifically for battery charge or load switching in cellular handsets and other ultraportable applications. It features a low on-state resistance and is housed in a MicroFET 2x2 package with a maximum profile of 0.8mm.
| Drain to Source Voltage (Vds) | -20 V |
|---|---|
| Gate to Source Voltage (Vgs) | +8 V |
| Power Dissipation (Note 1a) | 24 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 7.8 A.
The maximum power dissipation is 24 W when mounted on a 1 in² pad.
The maximum operating junction temperature is +150 °C.