FDMA6023PZT is a dual P-Channel PowerTrench® MOSFET with a working voltage of -20V and a maximum on-state resistance of 60 mΩ. It is suitable for applications such as battery charge switch, battery management, and load switch.
This document is a datasheet for the Fairchild Semiconductor FDMA6023PZT, a Dual P-Channel PowerTrench MOSFET. The device features two independent P-Channel MOSFETs in a MicroFET 2x2 Thin package with low on-state resistance, designed specifically as a single package solution for battery charge switches in cellular handsets and other ultraportable applications.
The datasheet provides comprehensive electrical characteristics including off-characteristics (breakdown voltage, leakage current), on-characteristics (threshold voltage, on-resistance), dynamic characteristics (capacitance, switching times), and drain-source diode parameters. It also includes typical performance graphs for on-region characteristics, capacitance versus voltage, and safe operating areas.
| Drain to Source Voltage (VDS) | -20 V |
|---|---|
| On-Resistance (RDS(on)) Max @ VGS=-4.5V, ID=-3.6A | 60 mΩ |
| Operating Junction Temperature Range | -55 to +150 °C |
It is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications.
Yes, the document lists it as RoHS Compliant.