Fairchild Semiconductor FDMA8884 N-Channel MOSFET Datasheet

This document describes the features and characteristics of the FDMA8884 N-Channel Power Trench® MOSFET product released in April 2012, including maximum on-state resistance, high-performance trench technology, fast switching speed, etc.

Brand: Fairchild
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 6
File format: PDF
File size: 245 KB
Published: 11 July, 2012
Updated: 28 September, 2023
MD5 checksum: 0068A340264A924F681901D0341639DD
PDF: Fairchild Semiconductor FDMA8884 N-Channel MOSFET Datasheet PDF

About this manual

The FDMA8884 is a single N-Channel Power Trench MOSFET produced using Fairchild Semiconductor's advanced Power Trench process. It is optimized for low on-resistance (RDS(on)) and switching performance, making it suitable for use as a primary switch in power applications. The device is RoHS Compliant and available in a MicroFET 2x2 package.

What's inside

Features
General Description
Application
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Typical Characteristics
Dimensional Outline

Specifications

Input Capacitance	450 pF

Frequently asked questions

What is the primary application for the FDMA8884?

The device is intended for use as a primary switch.

Is the FDMA8884 RoHS Compliant?

Yes, the datasheet states the device is RoHS Compliant.

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