This document describes the features and characteristics of the FDMA507PZ P-channel PowerTrench® MOSFET, including a maximum rDS(on) of 24 mΩ, a low profile (0.8 mm maximum) MicroFET 2X2 mm package, and an HBM ESD protection level >3.2K V typical value.
The document describes the Fairchild Semiconductor FDMA507PZ, a Single P-Channel PowerTrench MOSFET designed for battery charge or load switching in cellular handsets and other ultraportable applications. The device features low on-state resistance and is housed in a 2x2 mm MicroFET package with a maximum profile of 0.8 mm.
| Pulsed Drain Current | -24 A |
|---|
The component operates and stores within a range of -55 to +150 °C.