FDMA8878 is a single N-channel high performance Power Trench MOSFET with extremely low RDS(on), fast switching speed and RoHS compliant. It is suitable for applications including DC/DC Buck converters, load switch in NB and notebook battery power management.
The document describes the Fairchild Semiconductor FDMA8878, an N-Channel MOSFET utilizing advanced Power Trench technology optimized for low on-resistance (16 mΩ) and fast switching speeds. It is RoHS compliant and suitable for applications such as DC/DC buck converters and notebook battery power management.
| Drain to Source Voltage (VDS) | 30 V |
|---|---|
| Continuous Drain Current (ID) | 9.0 A |
| Static Drain to Source On Resistance (RDS(on)) | 16 mΩ |
| Operating Junction Temperature Range (Tj) | -55 to +150 °C |
| Thermal Resistance Junction-to-Ambient (RθJA) | 145 °C/W |
The device supports a continuous drain current of 9.0 A when the case temperature is 25°C.
The device should be mounted on a minimum pad of 2 oz copper to achieve the specified thermal resistance.