This document describes the features and characteristics of FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET, including maximum on-resistance, low profile package, HBM ESD protection, etc. This product is designed specifically for Li-Ion battery pack protection circuit and other ultra-portable applications.
The document describes the Fairchild Semiconductor FDMB2307NZ, a Dual Common Drain N-Channel PowerTrench MOSFET designed specifically as a single package solution. It features two common drain N-channel MOSFETs which enable bidirectional current flow, making it suitable for Li-Ion battery pack protection circuits and other ultra-portable applications.
The datasheet details the device's maximum ratings, electrical characteristics including off-state leakage and on-resistance, dynamic switching parameters, and source-to-source diode characteristics. It also includes typical performance curves such as normalized on-resistance versus junction temperature and gate charge characteristics.
| Source1 to Source2 Voltage | 20 V |
|---|---|
| Gate to Source Voltage | +/- 12 V |
| Source1 to Source2 Current - Continuous | 9.7 A |
| Power Dissipation | 2.2 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Ambient (Dual Operation) | 57 °C/W |
| Total Gate Charge | 28 nC |
This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications.
Yes, it features two common drain N-channel MOSFETs which enables bidirectional current flow.
The maximum continuous source-to-source current at 25°C is 9.7 A.