FCA76N60N N-Channel MOSFET, is Fairchild's next generation of high voltage super-junction MOSFETs, employing a deep trench filling process that differentiates it from preceding multi-epi based technologies. This product provides world class Rsp, superior switching performance and ruggedness.
This document is a technical datasheet for the Fairchild Semiconductor FCA76N60N, an N-Channel MOSFET utilizing SupreMOS technology. The device is designed for high voltage super-junction applications including AC-DC SMPS requirements for PFC, server/telecom power, and industrial power.
| Package Type | TO-3PN |
|---|---|
| Total Gate Charge (Typ.) | 218 nC |
The component operates and stores within a range of -55 to +150 °C.
The maximum power dissipation rating is 548 W when the case temperature is 25°C.