The IR2301(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
The International Rectifier IR2301(S) is a high voltage, high speed cross-power MOSFET and IGBT driver featuring independent high and low side referenced output channels. It utilizes proprietary HVIC and latch immune CMOS technologies to provide ruggedized construction suitable for driving N-channel power MOSFETs or IGBTs up to 600 volts.
| Maximum High side floating absolute voltage | 625 V |
|---|---|
| Gate drive supply range | 5 to 20 V |
| Logic input compatibility | 3.3V, 5V and 15V |
| Turn-on propagation delay (Typ) | 220 ns |
| Turn-off propagation delay (Typ) | 200 ns |
| Output high short circuit pulsed current | 120 mA |
| Output low short circuit pulsed current | 250 mA |
| Package types | 8 Lead PDIP, 8 Lead SOIC |
The device is fully operational to +600V.
Yes, it is also available LEAD-FREE (PbF).
The recommended ambient temperature range is -40 to 150 °C.