The document describes the features and characteristics of the IR2113E6 high voltage, high speed power MOSFET and IGBT driver, including floating channel design, gate drive supply range from 10 to 20V, logic and power ground with ±5V offset, CMOS Schmitt-triggered inputs, etc.
The International Rectifier IR2113E6 is a high voltage, high speed power MOSFET and IGBT driver featuring independent high and low side referenced output channels. It utilizes proprietary HVIC and latch immune CMOS technologies to provide ruggedized monolithic construction suitable for driving N-channel power devices up to 600 volts in the high-side configuration.
The device includes features such as a floating channel designed for bootstrap operation, undervoltage lockout for both channels, and cycle-by-cycle edge-triggered shutdown logic. Logic inputs are compatible with standard CMOS or LSTTL outputs, while the output drivers feature a high pulse current buffer stage to minimize driver cross-conduction.
| High Side Floating Supply Absolute Voltage | -0.5 Vg +20 |
|---|---|
| High Side Floating Supply Offset Voltage Max | 600V |
| Turn-On Propagation Delay Typ. | 120 ns |
| Turn-Off Propagation Delay Typ. | 94 ns |
| Package Power Dissipation (Ta <= 25°C) | 1.6 W |
| Thermal Resistance, Junction to Ambient | 125 °C/W |
The maximum high side floating supply offset voltage is 600V.
Yes, it is tolerant to negative transient voltage of +/- 2A/2A dV/dt.