The IRSF3031 is a three-terminal monolithic SMART POWER MOS- FET with built-in short circuit, over-temperature, ESD and over-voltage protections and dual set/reset threshold input. The on-chip protection circuit latches off the power MOSFET in case the drain current exceeds 4A (typical) or the junction temperature ex- ceeds 165°C (typical) and keeps it off until the input is driven below the Reset Threshold voltage. The drain-to-source voltage is actively clamped at 55V (typical) prior to the avalanche of the power MOSFET, thus improving its performance during turn-off with inductive loads. The input requirements are very low (100µA typical) which makes the IRSF3031 compatible with most existing designs based on standard power MOSFETs.
The IRSF3031 is a three-terminal monolithic SMART POWER MOSFET designed for harsh operating environments. It includes built-in protections for short circuits, over-temperature, ESD, and over-voltage, with a dual set/reset threshold input that latches off the power MOSFET if the drain current exceeds 4A or the junction temperature exceeds 165°C.
The device features an active drain-to-source clamp at 55V to improve performance during turn-off with inductive loads and maintains very low operating input current (100µA typical). It is available in SOT-223 (IRSF3031L) and TO-220AB (IRSF3031) packages and is compatible with standard power MOSFET designs.
| Drain-to-Source Voltage (Max) | 50 V |
|---|---|
| Current Limit (Typical) | 4 A |
| Power Dissipation | 30 W |
| Input Supply Current (Normal Operation) | 100 µA typical |
The IRSF3031 is available in the SOT-223 package (model IRSF3031L) and the TO-220AB package (model IRSF3031).
The device shuts off when the junction temperature exceeds 165°C (typical).
Yes, it is compatible with most existing designs based on standard power MOSFETs due to its low operating input current.