The IRSF3031 is a three-terminal monolithic SMART POWER MOS- FET with built-in short circuit, over-temperature, ESD and over-voltage protections and dual set/reset threshold input. The on-chip protection circuit latches off the power MOSFET in case the drain current exceeds 4A (typical) or the junction temperature ex- ceeds 165°C (typical) and keeps it off until the input is driven below the Reset Threshold voltage. The drain-to-source voltage is actively clamped at 55V (typical) prior to the avalanche of the power MOSFET, thus improving its performance during turn-off with inductive loads. The input requirements are very low (100µA typical) which makes the IRSF3031 compatible with most existing designs based on standard power MOSFETs.