This document describes the main features and characteristics of the IR210SG12HCB model, including the maximum on-state voltage, reverse breakdown voltage, maximum DC gate current required to trigger, and maximum DC gate voltage required to trigger. It also includes information on the mechanical characteristics and dimensions of the product.
This document is a technical datasheet for the International Rectifier IR210SG12HCB, a square junction size phase control thyristor. The device features a 1200V reverse breakdown voltage rating and utilizes a glassivated MESA passivation process with silver metallization on both anode and cathode.
| Reverse Breakdown Voltage (Vary) | 1200 V |
|---|---|
| Maximum Required DC Gate Current to Trigger | 60 mA |
| Maximum Required DC Gate Voltage to Trigger | 1.9 V |
| Holding Current Range | 10 to 125 mA |
| Maximum Latching Current | 200 mA |
The maximum reverse breakdown voltage is 1200V.
The maximum on-state voltage is 1.5V.
The maximum required DC gate current to trigger is 60mA.