The IR2110L4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts.
The document is a technical data sheet for the IR2110L4, a high-speed power MOSFET and IGBT driver featuring independent high and low side referenced output channels. It utilizes proprietary HVIC and latch immune CMOS technologies to provide ruggedized monolithic construction suitable for driving N-channel power devices up to 400 volts.
| High Side Floating Supply Voltage Max | +20V |
|---|---|
| High Side Floating Supply Offset Voltage Max | 400V |
| Low Side Fixed Supply Voltage Range | 10 to 20V |
| Turn-On Propagation Delay Typ | 120ns |
| Delay Matching Max | 10ns |
| Package Power Dissipation @ Ta +25°C | 1.6W |
| Junction Temperature Range | -55 to 125°C |
The device supports a maximum high side floating supply offset voltage of 400V.
The typical turn-on propagation delay (ton) is 120ns.
The gate drive supply range is from 10 to 20V, and the separate logic supply range is from 5 to 20V.